Focused Ion Beam (FIB) projects the Liquid Metal Ion Source (LMIS) on the surface of the sample to obtain images or to remove substances. This FIB feature is similar to the FESEM (Field-emission Scanning Electron Microscope). However, FIB uses gallium-ions that has densities that are 125 times larger than electrons to bombard the surface of the sample. The organic gases can effectively select the etching/milling and depositing of conductors or nonconductors. Its main application is for IC circuit edits, partial cross-sections, and die differential properties analysis.

Circuit Edit
Using FIB to perform IC circuit edits is cost effective. Without opening Transparent Media Adapter (TMA), FIB reduces the time needed to test IC prototypes, therefore, bringing the launch date ahead benefiting the IC designers greatly. FIB can conduct selective micrometer, or even nanometer, scaled etching/milling and depositing of conductors or nonconductors, providing IC designers with a direct method to edit circuits in order to achieve successful test results while saving development time and editing costs.

Equipment
IST currently has nine FIB systems. Among these systems, the VectraVision, a FIB system firstly introduced to the Taiwan semiconductor industry specifically designed for the 65 nanometer processes, was imported to provide leading-edge Taiwanese IC design companies with a 65 nanometer IC circuit debugging and functions verifications for their prototypes. The FEI VectraVision, Vectora 986+, and FEI 800xP have larger vacuum chambers to directly conduct on-chip FIB applications on 8-inch wafers. In addition, the Vectra series uses the CAD Navigation Software to read KLARF and GDS II files enabling precise positioning.

Regardless of the sample quantity, the complexity level, or time consumption, our motto is to give our customers the results within 48 hours. Our FIB laboratory is opened 24/7 all year,  providing 24 hour  services 7 days a week for 365 days. However,

If our services are required on the holidays or weekends, please notify us before the last work day prior to the holiday or on the Friday before a weekend to ensure a sufficient number of personnel.
The receiving time during holidays and weekends are from 8:00AM~5:00PM.

Our FIB laboratory specifications are as follows :
9 FIB systems
The highest precision is 5pA with 5nm resolution
Deep layer micro-despositing and aluminum and copper conductor segmenting
Suitable for 8-inch wafers
Conductor metals used are platinum or wolfram; insulator materials used are silicon oxide compounds.
Halogen is used to facilitate etching
Supports the Knights Merlin CAD Navigation software
Highly precise laser guided platform
Infrared microscopes can be used to observe the CMP layer and silicon insulator layer

Suggestions for improving IC circuit repair yield :
Retest after sealing, wiring, and packaging
Making multiple edits at once would gradually reduce yield
Resistance of the two metal wires connecting to the FIB cannot be reduced to zero. Please understand the relevant electrical properties before applying it as well as predicting the possible level of resistance.
GDSII electrical circuit file is suggested to provide a better guide to designate a circuit area.